Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

For more information please check the datasheets.

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

Manufacturer:

Infineon

Manufacturer Part No:

IMT65R039M1HXUMA1

Enrgtech Part No:

ET100970181

Warranty:

Manufacturer

$ 8.66

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

61A

Maximum Drain Source Voltage Vds:

650V

Package Type:

PG-HSOF-8

Series:

CoolSiC MOSFET 650 V G1

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

51mΩ

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

23 V

Maximum Power Dissipation Pd:

263W

A700000012710101.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

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