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iqd009n06nm5cgatma1 Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
iqd009n06nm5cgatma1 Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1

Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1

Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IQD009N06NM5CGATMA1
Enrgtech Part No:
ET100968575
Warranty:
Manufacturer
$ 4.14 $ 4.14
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
445A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS
Package Type:
PG-TTFN-9
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
0.9mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1V
Typical Gate Charge Qg @ Vgs:
12nC
Maximum Power Dissipation Pd:
333W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
JEDEC, IEC61249-2-21, RoHS
Automotive Standard:
No
pdf icon
A700000012711298.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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