Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

Manufacturer:
Manufacturer Part No:
IQD016N08NM5CGATMA1
Enrgtech Part No:
ET100968570
Warranty:
Manufacturer
$ 4.30 $ 4.30
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
323A
Maximum Drain Source Voltage Vds:
80V
Package Type:
PG-TTFN-9
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
1.57mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1V
Typical Gate Charge Qg @ Vgs:
106nC
Maximum Power Dissipation Pd:
333W
Maximum Operating Temperature:
175°C
Standards/Approvals:
JEDEC, RoHS, IEC61249-2-21
Automotive Standard:
No
pdf icon
A700000012711342.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews