Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

Manufacturer:
Manufacturer Part No:
IPT65R040CFD7XTMA1
Enrgtech Part No:
ET100968487
Warranty:
Manufacturer
$ 8.62 $ 8.62
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
63A
Maximum Drain Source Voltage Vds:
650V
Series:
650V CoolMOS CFD7 SJ Power Device
Package Type:
PG-HSOF-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
40mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
97nC
Maximum Power Dissipation Pd:
347W
Forward Voltage Vf:
1V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
JEDEC
pdf icon
A700000012711486.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews