Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1

Manufacturer:
Manufacturer Part No:
IQD005N04NM6CGATMA1
Enrgtech Part No:
ET100968418
Warranty:
Manufacturer
$ 3.28 $ 3.28
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
610A
Maximum Drain Source Voltage Vds:
40V
Package Type:
PG-TTFN-9
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
0.47mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
333W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
129nC
Forward Voltage Vf:
1V
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS, IEC61249-2-21, JEDEC
Automotive Standard:
No
pdf icon
A700000012711254.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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