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ipn80r1k4p7atma1 Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1
ipn80r1k4p7atma1 Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1

Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPN80R1K4P7ATMA1
Enrgtech Part No:
ET100945735
Warranty:
Manufacturer
$ 0.73 $ 0.73
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
800V
Series:
800V CoolMOS P7
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.4Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
7W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Height:
1.8mm
Standards/Approvals:
No
Length:
6.7mm
Width:
3.7 mm
Automotive Standard:
No
pdf icon
A700000007366893.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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