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ipd50n06s2l13atma2 Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252 IPD50N06S2L13ATMA2
ipd50n06s2l13atma2 Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252 IPD50N06S2L13ATMA2

Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252 IPD50N06S2L13ATMA2

Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252 IPD50N06S2L13ATMA2

Manufacturer:
Infineon
Manufacturer Part No:
IPD50N06S2L13ATMA2
Enrgtech Part No:
ET100945213
Warranty:
Manufacturer
$ 0.94 $ 0.94
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
55V
Series:
OptiMOS
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
12.7mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
6.49kΩ
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
136W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
2.35mm
Length:
6.65mm
Width:
6.42 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007367413.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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