Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1

Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSL308CH6327XTSA1
Enrgtech Part No:
ET100945133
Warranty:
Manufacturer
$ 0.37 $ 0.37
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Channel Type:
Type P, Type N
Product Type:
MOSFET Arrays
Maximum Continuous Drain Current Id:
2.3A
Maximum Drain Source Voltage Vds:
30V
Series:
OptiMOS
Package Type:
TSOP
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
57mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
0.6W
Forward Voltage Vf:
1.1V
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
-5nC
Maximum Operating Temperature:
150°C
Transistor Configuration:
Dual
Height:
1mm
Length:
2.9mm
Width:
1.6 mm
Standards/Approvals:
IEC61249-2-21, RoHS
Number of Elements per Chip:
1
Distrelec Product Id:
304-39-398
Automotive Standard:
AEC-Q101
pdf icon
A700000007366769.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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