onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6561AN

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6561AN

Manufacturer:
Manufacturer Part No:
FDC6561AN
Enrgtech Part No:
ET100884164
Warranty:
Manufacturer
$ 0.45 $ 0.45
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
2.5A
Maximum Drain Source Voltage Vds:
30V
Series:
PowerTrench
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
152mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
2.3nC
Maximum Power Dissipation Pd:
960mW
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.78V
Maximum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Length:
3mm
Width:
1.7 mm
Height:
1mm
Number of Elements per Chip:
2
Automotive Standard:
No
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0900766b810d4e5b.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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