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ixfn360n15t2 IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2
ixfn360n15t2 IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

Manufacturer:
IXYS
Manufacturer Part No:
IXFN360N15T2
Enrgtech Part No:
ET100883340
Warranty:
Manufacturer
$ 48.64 $ 48.64
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
310A
Maximum Drain Source Voltage Vds:
150V
Package Type:
SOT-227
Series:
GigaMOS TrenchT2 HiperFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
1.07kW
Typical Gate Charge Qg @ Vgs:
715nC
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
9.6mm
Width:
25.07 mm
Length:
38.23mm
Automotive Standard:
No
Distrelec Product Id:
30253371
pdf icon
0900766b8157c9bb.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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