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ixfn420n10t IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T
ixfn420n10t IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

Manufacturer:
IXYS
Manufacturer Part No:
IXFN420N10T
Enrgtech Part No:
ET100883339
Warranty:
Manufacturer
$ 35.39 $ 35.39
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
420A
Maximum Drain Source Voltage Vds:
100V
Series:
GigaMOS Trench HiperFET
Package Type:
SOT-227
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
2.3mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1.07kW
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
670nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Length:
38.23mm
Standards/Approvals:
No
Height:
9.6mm
Width:
25.07 mm
Automotive Standard:
No
pdf icon
0900766b8157c9bd.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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