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ipw60r099p6xksa1 Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247 IPW60R099P6XKSA1
ipw60r099p6xksa1 Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247 IPW60R099P6XKSA1

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247 IPW60R099P6XKSA1

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247 IPW60R099P6XKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IPW60R099P6XKSA1
Enrgtech Part No:
ET100871170
Warranty:
Manufacturer
$ 5.05 $ 5.05
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
109A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-247
Series:
CoolMOS P6
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
99mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
70nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
278W
Forward Voltage Vf:
0.9V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
31.5 x 22 x 36.5mm
Height:
21.1mm
Width:
361mm
Automotive Standard:
No
pdf icon
A700000007725359.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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