Infineon CoolMOS Type N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1

Infineon CoolMOS Type N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1

Manufacturer:
Manufacturer Part No:
IPW65R110CFDAFKSA1
Enrgtech Part No:
ET100871156
Warranty:
Manufacturer
$ 6.96 $ 6.96
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
99.6A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-247
Series:
CoolMOS
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
110mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
0010
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-40°C
Maximum Power Dissipation Pd:
277.8W
Maximum Operating Temperature:
150°C
Height:
21.1mm
Standards/Approvals:
No
Width:
361mm
Length:
31.5 x 22 x 36.5mm
Automotive Standard:
No
pdf icon
A700000007726476.pdf(datasheets)
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