Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 75 V Enhancement, 3-Pin TO-263 IRF3007STRLPBF

Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 75 V Enhancement, 3-Pin TO-263 IRF3007STRLPBF

Manufacturer:
Manufacturer Part No:
IRF3007STRLPBF
Enrgtech Part No:
ET100871128
Warranty:
Manufacturer
$ 2.96 $ 2.96
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
62A
Maximum Drain Source Voltage Vds:
75V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
12.6mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
89nC
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
120W
Width:
9.65 mm
Height:
4.83mm
Standards/Approvals:
No
Length:
10.67mm
Automotive Standard:
No
pdf icon
A700000007726508.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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