Infineon HEXFET Type N-Channel MOSFET & Diode, 100 A, 30 V Enhancement, 8-Pin PQFN IRFH5300TRPBF

Infineon HEXFET Type N-Channel MOSFET & Diode, 100 A, 30 V Enhancement, 8-Pin PQFN IRFH5300TRPBF

Manufacturer:
Manufacturer Part No:
IRFH5300TRPBF
Enrgtech Part No:
ET100871109
Warranty:
Manufacturer
$ 1.21 $ 1.21
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
30V
Package Type:
PQFN
Series:
HEXFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
1.4mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
3.6W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
50nC
Maximum Operating Temperature:
150°C
Height:
0.9mm
Standards/Approvals:
RoHS
Width:
4.75 mm
Length:
6mm
Automotive Standard:
No
pdf icon
A700000007726404.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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