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irfr1010ztrpbf Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF
irfr1010ztrpbf Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFR1010ZTRPBF
Enrgtech Part No:
ET100871096
Warranty:
Manufacturer
$ 1.30 $ 1.30
Checking for live stock
Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
42A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
7.5mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
460nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
366W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Height:
20.7mm
Standards/Approvals:
No
Width:
5.31 mm
Length:
15.87mm
Automotive Standard:
No
pdf icon
A700000007725140.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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