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irfr3709ztrlpbf Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF
irfr3709ztrlpbf Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRFR3709ZTRLPBF
Enrgtech Part No:
ET100871091
Warranty:
Manufacturer
$ 0.89 $ 0.89
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
86A
Maximum Drain Source Voltage Vds:
30V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
6.5mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
79W
Typical Gate Charge Qg @ Vgs:
37.6mm
Forward Voltage Vf:
1V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
2.39 mm
Height:
330µF
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007725475.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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