Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL

Infineon HEXFET Type N-Channel MOSFET & Diode, 162 A, 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL

Manufacturer:
Manufacturer Part No:
AUIRF1404STRL
Enrgtech Part No:
ET100870608
Warranty:
Manufacturer
$ 5.99 $ 5.99
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
162A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Power Dissipation Pd:
200W
Typical Gate Charge Qg @ Vgs:
160nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
9.65 mm
Standards/Approvals:
No
Height:
4.83mm
Length:
10.67mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726294.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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