Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 12 A, 40 V Enhancement, 3-Pin TO-263 IPB015N04NGATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 12 A, 40 V Enhancement, 3-Pin TO-263 IPB015N04NGATMA1

Manufacturer:
Manufacturer Part No:
IPB015N04NGATMA1
Enrgtech Part No:
ET100870526
Warranty:
Manufacturer
$ 5.43 $ 5.43
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
40V
Series:
OptiMOS 3
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
1.5mΩ
Channel Mode:
Enhancement
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007726344.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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