Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1

For more information please check the datasheets.

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB031N08N5ATMA1

Enrgtech Part No:

ET100870520

Warranty:

Manufacturer

$ 3.67

Checking for live stock

Product Type:

MOSFET & Diode

Channel Type:

Type N

Maximum Continuous Drain Current Id:

120A

Maximum Drain Source Voltage Vds:

80V

Series:

OptiMOS 3

Package Type:

TO-263

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

3.1mΩ

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

A700000007725128.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1

Product Reviews