Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 180 A, 80 V Enhancement, 3-Pin TO-263 IPB019N08N3GATMA1

For more information please check the datasheets.

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 180 A, 80 V Enhancement, 3-Pin TO-263 IPB019N08N3GATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB019N08N3GATMA1

Enrgtech Part No:

ET100870517

Warranty:

Manufacturer

$ 4.02

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Channel Type:

Type N

Product Type:

MOSFET & Diode

Maximum Continuous Drain Current Id:

180A

Maximum Drain Source Voltage Vds:

80V

Package Type:

TO-263

Series:

OptiMOS 3

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

1.9mΩ

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

A700000007726496.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 180 A, 80 V Enhancement, 3-Pin TO-263 IPB019N08N3GATMA1

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