Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04LGATMA1

For more information please check the datasheets.

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04LGATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB011N04LGATMA1

Enrgtech Part No:

ET100870509

Warranty:

Manufacturer

$ 2.51

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Channel Type:

Type N

Product Type:

MOSFET & Diode

Maximum Continuous Drain Current Id:

180A

Maximum Drain Source Voltage Vds:

40V

Series:

OptiMOS 5

Package Type:

TO-263

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

1.1mΩ

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

A700000007726364.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04LGATMA1

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