Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1

For more information please check the datasheets.

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB60R060P7ATMA1

Enrgtech Part No:

ET100870486

Warranty:

Manufacturer

$ 4.67

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Channel Type:

Type N

Product Type:

MOSFET & Diode

Maximum Continuous Drain Current Id:

151A

Maximum Drain Source Voltage Vds:

650V

Package Type:

TO-263

Series:

CoolMOS P7

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

60mΩ

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

A700000007726529.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1

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