Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

For more information please check the datasheets.

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPB065N10N3GATMA1

Enrgtech Part No:

ET100870473

Warranty:

Manufacturer

$ 2.78

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Channel Type:

Type N

Product Type:

MOSFET & Diode

Maximum Continuous Drain Current Id:

80A

Maximum Drain Source Voltage Vds:

100V

Package Type:

TO-263

Series:

OptiMOS 3

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

6.5mΩ

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

A700000007725245.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

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