Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263 IPB65R190CFDAATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263 IPB65R190CFDAATMA1

Manufacturer:
Manufacturer Part No:
IPB65R190CFDAATMA1
Enrgtech Part No:
ET100870436
Warranty:
Manufacturer
$ 3.83 $ 3.83
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
57.2A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-263
Series:
CoolMOS P7
Mount Type:
Surface
Maximum Drain Source Resistance Rds:
190mΩ
Channel Mode:
Enhancement
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007726304.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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