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ipd30n06s4l23atma2 Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2
ipd30n06s4l23atma2 Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

Manufacturer:
Infineon
Manufacturer Part No:
IPD30N06S4L23ATMA2
Enrgtech Part No:
ET100870233
Warranty:
Manufacturer
$ 0.49 $ 0.49
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
TO-236AB
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
16.1nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
36W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Height:
2.41mm
Length:
6.73mm
Width:
6.22 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726384.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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