Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

For more information please check the datasheets.

Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

Manufacturer:

Infineon

Manufacturer Part No:

IPD60R170CFD7ATMA1

Enrgtech Part No:

ET100870224

Warranty:

Manufacturer

$ 2.42

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Product Type:

MOSFET & Diode

Channel Type:

Type N

Maximum Continuous Drain Current Id:

6 Pin

Maximum Drain Source Voltage Vds:

650V

Series:

CoolMOS

Package Type:

TO-252

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

170mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

76W

Maximum Gate Source Voltage Vgs:

20 V

A700000007726432.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

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