Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2

Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2

Manufacturer:
Manufacturer Part No:
IPD90N06S407ATMA2
Enrgtech Part No:
ET100870206
Warranty:
Manufacturer
$ 0.58 $ 0.58
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
6.9mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
43nC
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
79W
Maximum Operating Temperature:
175°C
Length:
6.73mm
Standards/Approvals:
No
Width:
6.22 mm
Height:
2.41mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726392.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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