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ipg20n10s4l35aatma1 Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1
ipg20n10s4l35aatma1 Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1

Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1

Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPG20N10S4L35AATMA1
Enrgtech Part No:
ET100870164
Warranty:
Manufacturer
$ 1.17 $ 1.17
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
100V
Series:
OptiMOS
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
35mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
13.4nC
Forward Voltage Vf:
1V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
43W
Maximum Gate Source Voltage Vgs:
±16 V
Maximum Operating Temperature:
175°C
Transistor Configuration:
Dual
Length:
5.15mm
Standards/Approvals:
RoHS Compliant
Height:
1mm
Width:
5.9 mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
A700000007726516.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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