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ipg20n10s4l35atma1 Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1
ipg20n10s4l35atma1 Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1

Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1

Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPG20N10S4L35ATMA1
Enrgtech Part No:
ET100870156
Warranty:
Manufacturer
$ 1.05 $ 1.05
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Channel Type:
Type N
Product Type:
1 x 1 x 0.38mm
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
100V
Series:
OptiMOS
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
35mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
13.4nC
Maximum Power Dissipation Pd:
43W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Transistor Configuration:
Dual
Height:
1mm
Length:
5.15mm
Standards/Approvals:
RoHS
Width:
5.9 mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
A700000007726480.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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