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ipn60r600p7satma1 Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1
ipn60r600p7satma1 Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPN60R600P7SATMA1
Enrgtech Part No:
ET100870120
Warranty:
Manufacturer
$ 0.68 $ 0.68
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
16A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolMOS P7
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
600mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
7W
Typical Gate Charge Qg @ Vgs:
9nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Width:
3.7 mm
Length:
6.7mm
Standards/Approvals:
No
Height:
1.8mm
Automotive Standard:
No
pdf icon
A700000007726324.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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