STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT027H65G3AG

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT027H65G3AG

Manufacturer:
Manufacturer Part No:
SCT027H65G3AG
Enrgtech Part No:
ET100852513
Warranty:
Manufacturer
$ 20.93 $ 20.93
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
60A
Maximum Drain Source Voltage Vds:
650V
Series:
13Ω
Package Type:
H2PAK-7
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
29mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
2.9V
Maximum Power Dissipation Pd:
300W
Maximum Gate Source Voltage Vgs:
22 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
48.6nC
Maximum Operating Temperature:
175°C
Height:
4.8mm
Length:
15.25mm
Standards/Approvals:
RoHS, AEC-Q101
Width:
3 nC @ 4.5 V, 5.5 nC @ 4.5 V
Automotive Standard:
AEC-Q101
pdf icon
A700000012489177.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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