onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

Manufacturer:
Manufacturer Part No:
NVMYS1D3N04CTWG
Enrgtech Part No:
ET100799437
Warranty:
Manufacturer
$ 2.09 $ 2.09
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
252A
Maximum Drain Source Voltage Vds:
40V
Series:
NVMYS1D3N04C
Package Type:
LFPAK
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
1.15mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
134W
Typical Gate Charge Qg @ Vgs:
75nC
Maximum Operating Temperature:
175°C
Height:
1.2mm
Length:
5mm
Width:
4.25 mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
0900766b816e7519.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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