Infineon HEXFET Type N-Channel MOSFET, 4.4 A, 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF

Infineon HEXFET Type N-Channel MOSFET, 4.4 A, 55 V Enhancement, 4-Pin SOT-223 IRLL024NTRPBF

Manufacturer:
Manufacturer Part No:
IRLL024NTRPBF
Enrgtech Part No:
ET100771987
Warranty:
Manufacturer
$ 0.42 $ 0.42
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
HLMP-Q800
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
100mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
10.4nC
Maximum Power Dissipation Pd:
2.1W
Forward Voltage Vf:
1V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
6.7mm
Height:
1.739mm
Width:
3.7 mm
Distrelec Product Id:
304-44-473
Automotive Standard:
No
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0900766b8133abb5.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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