Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRLL2705TRPBF

Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRLL2705TRPBF

Manufacturer:
Manufacturer Part No:
IRLL2705TRPBF
Enrgtech Part No:
ET100771985
Warranty:
Manufacturer
$ 0.67 $ 0.67
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
5.2A
Maximum Drain Source Voltage Vds:
55V
Package Type:
SOT-223
Series:
HEXFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
50 Vrms ac/dc
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
2.1W
Maximum Gate Source Voltage Vgs:
16 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
32nC
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
6.7mm
Height:
1.739mm
Width:
3.7 mm
Distrelec Product Id:
304-44-474
Automotive Standard:
No
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0900766b8133abb6.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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