Infineon HEXFET Type N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252 IRLR2905TRPBF

Infineon HEXFET Type N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252 IRLR2905TRPBF

Manufacturer:
Manufacturer Part No:
IRLR2905TRPBF
Enrgtech Part No:
ET100771976
Warranty:
Manufacturer
$ 0.94 $ 0.94
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
42A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
40mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
110W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
2.39mm
Standards/Approvals:
No
Length:
6.73mm
Width:
6.22 mm
Automotive Standard:
No
Distrelec Product Id:
304-44-477
pdf icon
0900766b8133abc2.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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