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iptg111n20nm3fdatma1 Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG IPTG111N20NM3FDATMA1
iptg111n20nm3fdatma1 Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG IPTG111N20NM3FDATMA1

Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG IPTG111N20NM3FDATMA1

Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG IPTG111N20NM3FDATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPTG111N20NM3FDATMA1
Enrgtech Part No:
ET100750318
Warranty:
Manufacturer
$ 8.48 $ 8.48
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
108A
Maximum Drain Source Voltage Vds:
200V
Series:
IPTG
Package Type:
HSOG
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
11.1mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
8.38mm
Maximum Power Dissipation Pd:
375W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Width:
8.75 mm
Height:
2.4mm
Length:
10.1mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008293493.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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