Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1

Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1

Manufacturer:
Manufacturer Part No:
BSP135H6327XTSA1
Enrgtech Part No:
ET100727463
Warranty:
Manufacturer
$ 1.71 $ 1.71
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
120mA
Maximum Drain Source Voltage Vds:
600V
Series:
499Ω
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
STANDARD .062" Connector Housing
Channel Mode:
Depletion
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
1.8W
Typical Gate Charge Qg @ Vgs:
3.7nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
3.5 mm
Height:
1.6mm
Standards/Approvals:
No
Length:
6.5mm
Automotive Standard:
AEC-Q101
Distrelec Product Id:
302-83-876
pdf icon
0900766b813649b3.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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