STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4

STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4

Manufacturer:
Manufacturer Part No:
SCTWA35N65G2V-4
Enrgtech Part No:
ET100720261
Warranty:
Manufacturer
$ 14.97 $ 14.97
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
45A
Maximum Drain Source Voltage Vds:
650V
Package Type:
Hip-247
Series:
SCTWA35N65G2V-4
Mount Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance Rds:
67mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
240W
Maximum Gate Source Voltage Vgs:
22 V
Forward Voltage Vf:
3.3V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
73nC
Maximum Operating Temperature:
200°C
Height:
5.1mm
Length:
20.1mm
Width:
21.1 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000008283557.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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