IXYS Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227 IXFN60N80P

IXYS Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227 IXFN60N80P

Manufacturer:
Manufacturer Part No:
IXFN60N80P
Enrgtech Part No:
ET100711994
Warranty:
Manufacturer
$ 49.46 $ 49.46
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
53A
Maximum Drain Source Voltage Vds:
800V
Package Type:
SOT-227
Mount Type:
Panel
Pin Count:
4
Maximum Drain Source Resistance Rds:
140mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.5V
Typical Gate Charge Qg @ Vgs:
250nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
1.04kW
Maximum Operating Temperature:
150°C
Length:
38.23mm
Standards/Approvals:
No
Width:
25.42 mm
Height:
9.6mm
Automotive Standard:
No
Distrelec Product Id:
30253376
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0900766b80a3c588.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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