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si4900dy-t1-e3 Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3
si4900dy-t1-e3 Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3

Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3

Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4900DY-T1-E3

Manufacturer:
Vishay
Manufacturer Part No:
SI4900DY-T1-E3
Enrgtech Part No:
ET100666010
Warranty:
Manufacturer
$ 1.17 $ 1.17
Checking for live stock
Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
850nm
Maximum Drain Source Voltage Vds:
60V
Package Type:
SO-8
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.058Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
ROX3S
Maximum Power Dissipation Pd:
3.1W
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
150°C
Length:
4.8mm
Height:
1.35mm
Width:
4 mm
Standards/Approvals:
IEC 61249-2-21
Automotive Standard:
No
pdf icon
A700000006404205.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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