onsemi UniFET Type N-Channel MOSFET, 6.2 A, 250 V Enhancement, 3-Pin TO-252 FDD7N25LZTM

onsemi UniFET Type N-Channel MOSFET, 6.2 A, 250 V Enhancement, 3-Pin TO-252 FDD7N25LZTM

Manufacturer:
Manufacturer Part No:
FDD7N25LZTM
Enrgtech Part No:
ET100663370
Warranty:
Manufacturer
$ 0.86 $ 0.86
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.2A
Maximum Drain Source Voltage Vds:
250V
Series:
UniFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
570mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
12nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
56W
Forward Voltage Vf:
1.4V
Maximum Operating Temperature:
150°C
Height:
2.39mm
Width:
6.22 mm
Standards/Approvals:
No
Length:
6.73mm
Automotive Standard:
No
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0900766b812cf774.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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