Vishay Type N-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3

Vishay Type N-Channel MOSFET, 421 A, 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIDR500EP-T1-RE3
Enrgtech Part No:
ET100648020
Warranty:
Manufacturer
$ 4.97 $ 4.97
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
421A
Maximum Drain Source Voltage Vds:
30V
Package Type:
PowerPAK SO-8DC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.00068mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.1V
Typical Gate Charge Qg @ Vgs:
46.1nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
150W
Maximum Operating Temperature:
175°C
Length:
6.15mm
Width:
5.15 mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000009140513.pdf(datasheets)
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