Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3

For more information please check the datasheets.

Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIHK075N60EF-T1GE3

Enrgtech Part No:

ET100647982

Warranty:

Manufacturer

$ 8.14

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Channel Type:

Type N

Product Type:

MOSFET & Diode

Maximum Continuous Drain Current Id:

2.42mm

Maximum Drain Source Voltage Vds:

650V

Package Type:

PowerPAK 10 x 12

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.05mΩ

Channel Mode:

Depletion

Minimum Operating Temperature:

-55°C

Forward Voltage Vf:

1.1V

Typical Gate Charge Qg @ Vgs:

6.49kΩ

A700000009139931.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3

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