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ixft60n65x2hv IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268
ixft60n65x2hv IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268

IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268

IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268

Manufacturer:
IXYS
Manufacturer Part No:
IXFT60N65X2HV
Enrgtech Part No:
ET100640223
Warranty:
Manufacturer
$ 7.27 $ 7.27
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
60A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-268
Series:
HiperFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
52mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.4V
Typical Gate Charge Qg @ Vgs:
108nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
780W
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
16.05mm
Width:
15.15 mm
Height:
5.1mm
Automotive Standard:
No
Distrelec Product Id:
30253402
pdf icon
0900766b815e9d2a.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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