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ixfn110n85x IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227
ixfn110n85x IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227

IXYS HiperFET Type N-Channel MOSFET, 110 A, 850 V Enhancement, 4-Pin SOT-227

Manufacturer:
IXYS
Manufacturer Part No:
IXFN110N85X
Enrgtech Part No:
ET100640128
Warranty:
Manufacturer
$ 91.80 $ 91.80
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
850V
Package Type:
SOT-227
Series:
HiperFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
33mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.4V
Typical Gate Charge Qg @ Vgs:
425nC
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
1.17kW
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
25.07 mm
Length:
38.23mm
Height:
9.6mm
Standards/Approvals:
No
Distrelec Product Id:
30253360
Automotive Standard:
No
pdf icon
0900766b815e9d3c.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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