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ixfh60n65x2 IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247
ixfh60n65x2 IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247

IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247

IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247

Manufacturer:
IXYS
Manufacturer Part No:
IXFH60N65X2
Enrgtech Part No:
ET100640095
Warranty:
Manufacturer
$ 13.56 $ 13.56
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
60A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-247
Series:
HiperFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
52mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
108nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Maximum Power Dissipation Pd:
780W
Forward Voltage Vf:
1.4V
Maximum Operating Temperature:
150°C
Length:
31.5 x 22 x 36.5mm
Width:
361mm
Height:
21.34mm
Standards/Approvals:
No
Automotive Standard:
No
Distrelec Product Id:
302-53-331
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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