IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227

Manufacturer:
Manufacturer Part No:
IXFN90N85X
Enrgtech Part No:
ET100640086
Warranty:
Manufacturer
$ 64.31 $ 64.31
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
850V
Package Type:
SOT-227
Series:
HiperFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
14MHz
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.4V
Maximum Power Dissipation Pd:
1.2kW
Maximum Gate Source Voltage Vgs:
30 V
Typical Gate Charge Qg @ Vgs:
340nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
9.6mm
Length:
38.23mm
Width:
25.07 mm
Distrelec Product Id:
30253382
Automotive Standard:
No
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0900766b815e9d3a.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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