IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264

Manufacturer:
Manufacturer Part No:
IXFB90N85X
Enrgtech Part No:
ET100640079
Warranty:
Manufacturer
$ 23.60 $ 23.60
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Voltage Vds:
850V
Package Type:
PLUS264
Series:
HiperFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
14MHz
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1.79kW
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.4V
Typical Gate Charge Qg @ Vgs:
340nC
Maximum Operating Temperature:
150°C
Width:
5.31 mm
Standards/Approvals:
No
Length:
20.29mm
Height:
26.59mm
Distrelec Product Id:
30253305
Automotive Standard:
No
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0900766b815e9d38.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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