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ixfn170n65x2 IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227
ixfn170n65x2 IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227

IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227

IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227

Manufacturer:
IXYS
Manufacturer Part No:
IXFN170N65X2
Enrgtech Part No:
ET100631532
Warranty:
Manufacturer
$ 66.05 $ 66.05
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
170A
Maximum Drain Source Voltage Vds:
650V
Series:
HiperFET
Package Type:
SOT-227
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
13mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
434nC
Maximum Power Dissipation Pd:
1.17kW
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.4V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
9.6mm
Length:
38.23mm
Width:
25.07 mm
Automotive Standard:
No
pdf icon
0900766b815e9d32.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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